| PART |
Description |
Maker |
| HM5112805LTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Renesas Technology / Hitachi Semiconductor
|
| HM51W18165J-5 HM51W18165J-6 HM51W18165J-7 HM51W181 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
|
Hitachi Semiconductor
|
| HM51W16165 HM51W16165J-5 HM51W16165J-6 HM51W16165J |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
|
Hitachi Semiconductor
|
| HMD4M36M9G HMD4M36M9G-5 HMD4M36M9G-6 HMD4M36M9AG-5 |
16Mbyte(4Mx36) Fast Page with Parity Mode, 2K/4K Refresh
|
Hanbit Electronics Co.,...
HANBIT[Hanbit Electronics Co.,Ltd]
|
| HMD4M32M2VE HMD4M32M2VEG-5 HMD4M32M2VEG-6 |
16Mbyte(4Mx32) DRAM SIMM EDO MODE, 4K Refresh, 3.3V
|
Hanbit Electronics Co.,Ltd.
|
| MT4C4007J |
1 MEG x 4 DRAM 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH
|
Micron Technology
|
| HMD4M32M2EG HMD4M32M2EG-5 HMD4M32M2EG-6 |
16Mbyte(4Mx32) 72-pin SIMM EDO Mode, 4K Refresh, 5V
|
Hanbit Electronics Co.,Ltd
|
| V53C518165A V53C518165A50 V53C518165A60 |
1M x 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
|
MOSEL[Mosel Vitelic, Corp]
|
| HMD2M32M4EG-5 HMD2M32M4EG-6 HMD2M32M4EG-7 HMD2M32M |
8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
|
Hanbit Electronics Co.,Ltd
|
| HMD2M32M4EG HMD2M32M4EG-6 HMD2M32M4EG-7 HMD2M32M4E |
8Mbyte(2Mx32) EDO Mode, 1K Refresh 72Pin SIMM, 5V Design
|
Hanbit Electronics Co.,Ltd.
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
| HMD1M32M2G HMD1M32M2G-6 HMD1M32M2G-7 |
4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design
|
Hanbit Electronics Co.,Ltd.
|
